Volume pricing
- 1+ pcs$0.81
- 10+ pcs$0.77
- 100+ pcs$0.72
- 500+ pcs$0.68
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fall Time Typ
- 11 ns
- Pin Sayısı
- 8
- RoHS Durumu
- RoHS Compliant
- Drainsource On Resistancemax
- 0.03Ohm
- Input Capacitance Ciss Max Vds
- 560pF @ 20V
- Rise Time
- 6ns
- Terminal Sayısı
- 8
- Radyasyon Dayanımı
- No
- Operating Mode
- ENHANCEMENT MODE
- Gate To Source Voltage Vgs
- 20V
- Feedback Capmax Crss
- 135 pF
- Ambalaj
- Tape & Reel (TR)
- Turn Off Delay Time
- 21 ns
- Drain To Source Breakdown Voltage
- 30V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Yüzey Montaj
- YES
- Terminal Formu
- GULL WING
- Seri
- TrenchMOS™
- Turn On Delay Time
- 5 ns
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 16 Weeks
- Pin Sayısı
- 8
- Transistor Application
- SWITCHING
- Parça Durumu
- Obsolete
- Tepe Reflow Süresi (maks. sn)
- 30
- JESD-609 Kodu
- e4
- Vgsth Max Id
- 2V @ 1mA
- Max Dual Supply Voltage
- 30V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- ECCN Kodu
- EAR99
- Continuous Drain Current Id
- 6.3A
- Terminal Kaplaması
- NICKEL PALLADIUM GOLD
- Gate Charge Qg Max Vgs
- 14.6nC @ 10V
- Number Of Elements
- 2
- Fet Type
- 2 N-Channel (Dual)
- Nem Hassasiyeti (MSL)
- 2 (1 Year)
- Rds On Max Id Vgs
- 30m Ω @ 7A, 10V
- Power Dissipation
- 2W
- Additional Feature
- LOGIC LEVEL COMPATIBLE
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