Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 8
- RoHS Durumu
- RoHS Compliant
- Drainsource On Resistancemax
- 0.02Ohm
- Fall Time Typ
- 11 ns
- Montaj
- Surface Mount
- Drain To Source Voltage Vdss
- 30V
- Terminal Sayısı
- 8
- Input Capacitance Ciss Max Vds
- 752pF @ 15V
- Rise Time
- 7ns
- Terminal Formu
- GULL WING
- Seri
- TrenchMOS™
- Operating Mode
- ENHANCEMENT MODE
- Gate To Source Voltage Vgs
- 20V
- Ambalaj
- Tape & Reel (TR)
- Turn Off Delay Time
- 23 ns
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Drain To Source Breakdown Voltage
- 30V
- Qualification Status
- Not Qualified
- Pin Sayısı
- 8
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Transistor Element Material
- SILICON
- Vgsth Max Id
- 2V @ 250μA
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Application
- SWITCHING
- Parça Durumu
- Obsolete
- JESD-609 Kodu
- e4
- Tepe Reflow Süresi (maks. sn)
- 30
- ECCN Kodu
- EAR99
- Continuous Drain Current Id
- 10.4A
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Type
- 2 N-Channel (Dual)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 20m Ω @ 8A, 10V
- Power Dissipation
- 3.57W
- Gate Charge Qg Max Vgs
- 10.7nC @ 5V
- Number Of Elements
- 2
- Max Power Dissipation
- 3.57W
- Fet Feature
- Logic Level Gate
- Jedec95 Code
- MS-012AA
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