PHC2300,118

Specifications

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Fabrika Tedarik Süresi

16 Weeks

Vgsth Max Id

2V @ 1mA

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2011

Drain To Source Voltage Vdss

300V

Tepe Reflow Süresi (maks. sn)

30

Parça Durumu

Obsolete

Number Of Elements

2

Current Continuous Drain Id25

340mA 235mA

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

6 Ω @ 170mA, 10V

ECCN Kodu

EAR99

Terminal Sayısı

8

Montaj Tipi

Surface Mount

JESD-609 Kodu

e4

Drainsource On Resistancemax

6Ohm

Yüzey Montaj

YES

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Operating Mode

ENHANCEMENT MODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate Charge Qg Max Vgs

6.24nC @ 10V

Pin Sayısı

8

Input Capacitance Ciss Max Vds

102pF @ 50V

Pin Sayısı

8

Ds Breakdown Voltagemin

300V

Continuous Drain Current Id

340mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

260

Transistor Element Material

SILICON

Power Dissipation

1.6W

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Fet Feature

Logic Level Gate

Fet Type

N and P-Channel

Terminal Pozisyonu

DUAL

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Drain Currentmax Abs Id

0.34A