Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Continuous Drain Current Id
- 3.5A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation
- 2W
- Transistor Element Material
- SILICON
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Fet Feature
- Logic Level Gate
- Fet Type
- N and P-Channel
- Terminal Pozisyonu
- DUAL
- Terminal Formu
- GULL WING
- Qualification Status
- Not Qualified
- Transistor Application
- SWITCHING
- Jedec95 Code
- MS-012AA
- RoHS Durumu
- ROHS3 Compliant
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Vgsth Max Id
- 2.8V @ 1mA
- Fabrika Tedarik Süresi
- 16 Weeks
- Drain To Source Voltage Vdss
- 30V
- Çalışma Sıcaklığı
- 150°C TJ
- Yayın Yılı
- 2011
- Current Continuous Drain Id25
- 3.5A 2.3A
- Number Of Elements
- 2
- Parça Durumu
- Obsolete
- Rds On Max Id Vgs
- 100m Ω @ 2.2A, 10V
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 8
- Yüzey Montaj
- YES
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Pin Sayısı
- 8
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge Qg Max Vgs
- 30nC @ 10V
- Input Capacitance Ciss Max Vds
- 250pF @ 20V
- Pin Sayısı
- 8
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