Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Emitter Base Voltage Vebo
- -7V
- Hfemin
- 170
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Dual
- Currentcollector Ic Max
- 1A
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 500mA 2V
- Power Max
- 510mW
- Kılıf / Paket
- 6-UDFN Exposed Pad
- Polarity
- PNP
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Surface Mount
- Vce Saturation Max Ib Ic
- 340mV @ 100mA, 1A
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 1.45W
- Fabrika Tedarik Süresi
- 8 Weeks
- Parça Durumu
- Active
- Voltage Collector Emitter Breakdown Max
- 60V
- Çalışma Sıcaklığı
- 150°C TJ
- Ambalaj
- Cut Tape (CT)
- Pin Sayısı
- 6
- Yayın Yılı
- 2013
- Montaj
- Surface Mount
- Gain Bandwidth Product
- 125MHz
- Collector Base Voltage Vcbo
- -60V
- JESD-609 Kodu
- e3
- Terminal Kaplaması
- Tin (Sn)
- Current Collector Cutoff Max
- 100nA ICBO
- Collector Emitter Voltage Vceo
- -60V
- Collectoremitter Saturation Voltage
- -125mV
- Pin Sayısı
- 6
- Max Collector Current
- -1.5A
- Transistor Type
- 2 PNP (Dual)
Related Products
In Stock
Echelon Corporation
15400R-57B
Arrays BJT Transistors
In Stock
Echelon Corporation
15401R-47BP
Arrays BJT Transistors
In Stock
Echelon Corporation
15402R-47B
Arrays BJT Transistors
In Stock
Central Semiconductor Corp
2N2060
Arrays BJT Transistors
In Stock
Central Semiconductor Corp
2N2060A
Arrays BJT Transistors
Microsemi Corporation
2N2060L
Arrays BJT Transistors
In Stock
Central Semiconductor Corp
2N2060M
Arrays BJT Transistors
In Stock
Seme LAB
2N2223
Arrays BJT Transistors