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PBSS4350SPN,115

Nexperia USA Inc.

PBSS4350SPN,115

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.49
  • 10+ pcs$0.46
  • 100+ pcs$0.44
  • 500+ pcs$0.41

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RoHS

Compliant

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Specifications

Tepe Reflow Süresi (maks. sn)
30
Emitter Base Voltage Vebo
5V
Max Breakdown Voltage
50V
Element Configuration
Dual
RoHS Durumu
ROHS3 Compliant
Temel Parça No
PBSS4350SPN
Terminal Formu
GULL WING
Dc Current Gain Hfe Min Ic Vce
300 @ 1A 2V / 180 @ 1A 2V
Kılıf / Paket
8-SOIC (0.154, 3.90mm Width)
Power Max
750mW
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Surface Mount
Power Dissipation
1.43W
Polarity
NPN, PNP
Collectoremitter Breakdown Voltage
50V
Transistor Element Material
SILICON
Vce Saturation Max Ib Ic
340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
Tepe Reflow Sıcaklığı (°C)
260
Number Of Elements
2
Max Power Dissipation
1.43W
Fabrika Tedarik Süresi
4 Weeks
Parça Durumu
Active
Yayın Yılı
2007
Ambalaj
Tape & Reel (TR)
Pin Sayısı
8
Çalışma Sıcaklığı
150°C TJ
Montaj
Surface Mount
Transistor Application
SWITCHING
Collector Base Voltage Vcbo
50V
JESD-609 Kodu
e4
ECCN Kodu
EAR99
Kurşunsuz
Lead Free
Terminal Sayısı
8
Terminal Kaplaması
Nickel/Palladium/Gold (Ni/Pd/Au)
Current Collector Cutoff Max
100nA
Turn On Timemax Ton
104ns
Collector Emitter Voltage Vceo
50V
Max Collector Current
2.7A
Pin Sayısı
8
Transistor Type
NPN, PNP

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