Volume pricing
- 1+ pcs$0.98
- 10+ pcs$0.92
- 100+ pcs$0.87
- 500+ pcs$0.82
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- 6-UDFN Exposed Pad
- Power Max
- 510mW
- Temel Parça No
- PBSS4260
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 1A 2V
- Currentcollector Ic Max
- 2A
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Dual
- Emitter Base Voltage Vebo
- 7V
- Number Of Elements
- 2
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 8 Weeks
- Max Power Dissipation
- 1.45W
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Frequency Transition
- 140MHz
- Vce Saturation Max Ib Ic
- 90mV @ 50mA, 500mA
- Case Connection
- COLLECTOR
- Montaj Tipi
- Surface Mount
- Power Dissipation
- 2W
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Polarity
- NPN, PNP
- JESD-609 Kodu
- e3
- Collector Base Voltage Vcbo
- 60V
- Gain Bandwidth Product
- 100MHz
- Montaj
- Surface Mount
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2012
- Çalışma Sıcaklığı
- 150°C TJ
- Pin Sayısı
- 6
- Ambalaj
- Cut Tape (CT)
- Transistor Type
- NPN, PNP
- Max Collector Current
- 3A
- Pin Sayısı
- 6
- Collectoremitter Saturation Voltage
- -100mV
- Collector Emitter Voltage Vceo
- 60V
- Current Collector Cutoff Max
- 100nA ICBO
- Transition Frequency
- 140MHz
- Terminal Kaplaması
- Tin (Sn)
- Terminal Sayısı
- 6
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