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PBSS4220PANSX

Nexperia USA Inc.

PBSS4220PANSX

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.14
  • 10+ pcs$0.13
  • 100+ pcs$0.12
  • 500+ pcs$0.12

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RoHS

Compliant

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Specifications

Parça Durumu
Active
Fabrika Tedarik Süresi
8 Weeks
Max Power Dissipation
370mW
Number Of Elements
2
Frequency Transition
120MHz
Vce Saturation Max Ib Ic
320mV @ 200mA, 2A
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Transistor Element Material
SILICON
Jesd30 Code
S-PDSO-N6
Case Connection
COLLECTOR
Collectoremitter Breakdown Voltage
20V
Polaritychannel Type
NPN
Montaj Tipi
Surface Mount
Nem Hassasiyeti (MSL)
1 (Unlimited)
Seri
Automotive, AEC-Q101
Power Max
370mW
Kılıf / Paket
6-UDFN Exposed Pad
Dc Current Gain Hfe Min Ic Vce
200 @ 1A 2V
Terminal Formu
NO LEAD
Reference Standard
AEC-Q101; IEC-60134
RoHS Durumu
ROHS3 Compliant
Max Breakdown Voltage
20V
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Transistor Type
2 NPN (Dual)
Max Collector Current
2A
Collector Emitter Voltage Vceo
320mV
Transition Frequency
120MHz
Current Collector Cutoff Max
100nA ICBO
Terminal Sayısı
6
Configuration
SEPARATE, 2 ELEMENTS
Transistor Application
SWITCHING
Montaj
Surface Mount
Çalışma Sıcaklığı
150°C TJ
Ambalaj
Tape & Reel (TR)
Yayın Yılı
2015

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