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PBSS4160PANSX

Nexperia USA Inc.

PBSS4160PANSX

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.82
  • 10+ pcs$0.77
  • 100+ pcs$0.73
  • 500+ pcs$0.69

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RoHS

Compliant

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Specifications

Max Collector Current
1A
Transistor Type
2 NPN (Dual)
Terminal Sayısı
6
Collector Emitter Voltage Vceo
120mV
Current Collector Cutoff Max
100nA ICBO
Transition Frequency
175MHz
Configuration
SEPARATE, 2 ELEMENTS
Yayın Yılı
2015
Çalışma Sıcaklığı
150°C TJ
Ambalaj
Tape & Reel (TR)
Montaj
Surface Mount
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Frequency Transition
175MHz
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Vce Saturation Max Ib Ic
120mV @ 50mA, 500mA
Number Of Elements
2
Parça Durumu
Active
Fabrika Tedarik Süresi
8 Weeks
Max Power Dissipation
370mW
Montaj Tipi
Surface Mount
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collectoremitter Breakdown Voltage
60V
Polaritychannel Type
NPN
Case Connection
COLLECTOR
Jesd30 Code
S-PDSO-N6
Reference Standard
AEC-Q101; IEC-60134
Dc Current Gain Hfe Min Ic Vce
150 @ 500mA 2V
Terminal Formu
NO LEAD
Kılıf / Paket
6-UDFN Exposed Pad
Seri
Automotive, AEC-Q101
Power Max
370mW
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
RoHS Durumu
ROHS3 Compliant
Max Breakdown Voltage
60V

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