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PBSS4021SPN,115

Nexperia USA Inc.

PBSS4021SPN,115

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.55
  • 10+ pcs$0.52
  • 100+ pcs$0.49
  • 500+ pcs$0.47

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RoHS

Compliant

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Specifications

Kılıf / Paket
8-SOIC (0.154, 3.90mm Width)
Currentcollector Ic Max
7.5A 6.3A
Terminal Formu
GULL WING
Dc Current Gain Hfe Min Ic Vce
250 @ 4A 2V / 150 @ 4A 2V
Temel Parça No
PBSS4021SPN
Hfemin
300
Max Breakdown Voltage
20V
Element Configuration
Dual
RoHS Durumu
ROHS3 Compliant
Tepe Reflow Süresi (maks. sn)
30
Emitter Base Voltage Vebo
-5V
Parça Durumu
Active
Fabrika Tedarik Süresi
4 Weeks
Max Power Dissipation
2.3W
Radyasyon Dayanımı
No
Number Of Elements
2
Vce Saturation Max Ib Ic
275mV @ 375mA, 7.5A / 350mV @ 325mA, 6.5A
Tepe Reflow Sıcaklığı (°C)
260
Frequency Transition
115MHz 105MHz
Transistor Element Material
SILICON
Polarity
NPN, PNP
Collectoremitter Breakdown Voltage
20V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Surface Mount
ECCN Kodu
EAR99
Gain Bandwidth Product
115MHz
Collector Base Voltage Vcbo
20V
JESD-609 Kodu
e4
Transistor Application
SWITCHING
Montaj
Surface Mount
Ambalaj
Tape & Reel (TR)
Pin Sayısı
8
Çalışma Sıcaklığı
150°C TJ
Yayın Yılı
2007
Transistor Type
NPN, PNP
Pin Sayısı
8
Max Collector Current
6.3A
Transition Frequency
115MHz
Current Collector Cutoff Max
100nA
Collector Emitter Voltage Vceo
20V

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