Volume pricing
- 1+ pcs$0.19
- 10+ pcs$0.18
- 100+ pcs$0.17
- 500+ pcs$0.16
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Kaplaması
- Tin (Sn)
- Collector Base Voltage Vcbo
- 15V
- Max Power Dissipation
- 200mW
- Max Breakdown Voltage
- 15V
- Yayın Yılı
- 2001
- Transistor Type
- NPN, PNP
- Uzunluk
- 6.35mm
- Weight
- 4.535924g
- Polarity
- NPN, PNP
- RoHS Durumu
- ROHS3 Compliant
- Transistor Element Material
- SILICON
- Tepe Reflow Sıcaklığı (°C)
- 260
- Temel Parça No
- PBSS2515*PN
- Genişlik
- 6.35mm
- Current Collector Cutoff Max
- 100nA ICBO
- Collectoremitter Breakdown Voltage
- 15V
- Pin Sayısı
- 6
- Yükseklik
- 6.5024mm
- Gain Bandwidth Product
- 420MHz
- Element Configuration
- Dual
- Reach Svhc
- No SVHC
- Transistor Application
- SWITCHING
- Dc Current Gain Hfe Min Ic Vce
- 150 @ 100mA 2V
- Transition Frequency
- 420MHz
- Collector Emitter Voltage Vceo
- 15V
- Number Of Elements
- 2
- Fabrika Tedarik Süresi
- 4 Weeks
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 40
- Çalışma Sıcaklığı
- 150°C TJ
- Frekans
- 420MHz
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vce Saturation Max Ib Ic
- 250mV @ 50mA, 500mA
- Power Max
- 300mW
- JESD-609 Kodu
- e3
- Kurşunsuz
- Lead Free
- Frequency Transition
- 420MHz 280MHz
- Parça Durumu
- Active
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 6
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