Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Parça Durumu
- Active
- Pin Sayısı
- 6
- Terminal Sayısı
- 6
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 23.6pF @ 10V
- Transistor Application
- SWITCHING
- Fet Feature
- Logic Level Gate
- Reference Standard
- IEC-60134
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Jesd30 Code
- R-PDSO-N6
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Number Of Elements
- 2
- Fabrika Tedarik Süresi
- 4 Weeks
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- Vgsth Max Id
- 2.1V @ 250μA
- Terminal Formu
- NO LEAD
- Ambalaj
- Cut Tape (CT)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Max Power Dissipation
- 285mW
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Case Connection
- DRAIN
- Continuous Drain Current Id
- 260mA
- Yayın Yılı
- 2015
- Drain Currentmax Abs Id
- 0.33A
- Kılıf / Paket
- 6-XFDFN Exposed Pad
- Gate Charge Qg Max Vgs
- 1nC @ 10V
- Ds Breakdown Voltagemin
- 60V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Rds On Max Id Vgs
- 2.8 Ω @ 200mA, 10V
- Drainsource On Resistancemax
- 3.2Ohm
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Drain To Source Voltage Vdss
- 60V
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- 2 N-Channel (Dual)
- Power Max
- 285mW
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