NX6008NBKSX

Specifications

Rds On Max Id Vgs

2.7Ohm @ 300mA, 4.5V

Vgs Gatesource Voltage

- 8 V, + 8 V

Drain To Source Voltage Vdss

60V

Qg Gate Charge

460 pC

Transistor Type

Trench MOSFET

Fet Type

2 N-Channel (Dual)

Power Max

260mW (Ta), 1.3W (Tc)

Typical Turnoff Delay Time

5 ns

Fabrika Paket Adedi

3000

Transistor Polarity

N-Channel

Pd Power Dissipation

286 mW

Vgs Th Gatesource Threshold Voltage

900 mV

Tedarikçi Cihaz Paketi

6-TSSOP

Rds On Drainsource Resistance

2.7 Ohms

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Minimum Operating Temperature

- 55 C

Gate Charge Qg Max Vgs

0.7nC @ 4.5V

Forward Transconductance Min

1 S

RoHS

Details

Vds Drainsource Breakdown Voltage

60 V

Ürün Tipi

MOSFET

Current Continuous Drain Id25

220mA (Ta)

Montaj Tipi

Surface Mount

Part Aliases

934662515115

Vgsth Max Id

900mV @ 250μA

Id Continuous Drain Current

220 mA

Ambalaj

MouseReel

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Configuration

Dual

Channel Mode

Enhancement

Maks. Çalışma Sıcaklığı

+ 150 C

Number Of Channels

2 Channel

Ürün Durumu

Active

Typical Turnon Delay Time

1 ns

Input Capacitance Ciss Max Vds

27pF @ 30V

Fet Feature

Standard

Montaj Stili

SMD/SMT

Rise Time

2 ns