Volume pricing
- 1+ pcs$0.33
- 10+ pcs$0.31
- 100+ pcs$0.29
- 500+ pcs$0.28
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2013
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Drain Currentmax Abs Id
- 0.2A
- Fet Feature
- Standard
- Terminal Sayısı
- 6
- Fet Type
- 2 N-Channel (Dual)
- Continuous Drain Current Id
- 200mA
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drainsource On Resistancemax
- 5.2Ohm
- Number Of Elements
- 2
- Max Power Dissipation
- 260mW
- Transistor Application
- SWITCHING
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Active
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fabrika Tedarik Süresi
- 4 Weeks
- Input Capacitance Ciss Max Vds
- 20pF @ 10V
- RoHS Durumu
- ROHS3 Compliant
- Rds On Max Id Vgs
- 4.5 Ω @ 100mA, 10V
- Drain To Source Voltage Vdss
- 30V
- Operating Mode
- ENHANCEMENT MODE
- Max Dual Supply Voltage
- 30V
- Terminal Formu
- GULL WING
- Vgsth Max Id
- 1.5V @ 250μA
- Gate Charge Qg Max Vgs
- 0.44nC @ 4.5V
- Pin Sayısı
- 6
- Yüzey Montaj
- YES
- Pin Sayısı
- 6
- Transistor Element Material
- SILICON
- Kılıf / Paket
- SOT-563, SOT-666
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