Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- SOT-563, SOT-666
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e3
- Yüzey Montaj
- YES
- Pin Sayısı
- 6
- Terminal Formu
- GULL WING
- Vgsth Max Id
- 1.5V @ 250μA
- Power Max
- 375mW
- Max Dual Supply Voltage
- 30V
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 5 ns
- Pin Sayısı
- 6
- Terminal Kaplaması
- Tin (Sn)
- Gate Charge Qg Max Vgs
- 0.44nC @ 4.5V
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 4.5 Ω @ 100mA, 10V
- Drain To Source Breakdown Voltage
- 30V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fabrika Tedarik Süresi
- 4 Weeks
- Input Capacitance Ciss Max Vds
- 13pF @ 10V
- Max Power Dissipation
- 375mW
- Number Of Elements
- 2
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Active
- Transistor Application
- SWITCHING
- Number Of Channels
- 2
- Fet Type
- 2 N-Channel (Dual)
- Terminal Sayısı
- 6
- Gate To Source Voltage Vgs
- 1.2V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 5ns
- Continuous Drain Current Id
- 200mA
- Fall Time Typ
- 17 ns
- Montaj Tipi
- Surface Mount
- Yayın Yılı
- 2013
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Feature
- Logic Level Gate
- Element Configuration
- Dual
- Turn Off Delay Time
- 34 ns
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