Volume pricing
- 1+ pcs$0.35
- 10+ pcs$0.33
- 100+ pcs$0.31
- 500+ pcs$0.29
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 4.1 Ω @ 200mA, 4.5V
- Terminal Formu
- FLAT
- Vgsth Max Id
- 1.1V @ 250μA
- Max Dual Supply Voltage
- -30V
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 30V
- Turn On Delay Time
- 19 ns
- Pin Sayısı
- 6
- Gate Charge Qg Max Vgs
- 0.72nC @ 4.5V
- Terminal Kaplaması
- Tin (Sn)
- Yüzey Montaj
- YES
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Pin Sayısı
- 6
- Power Dissipation
- 390mW
- Jesd30 Code
- R-PDSO-G3
- Kılıf / Paket
- SOT-563, SOT-666
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e3
- Fall Time Typ
- 38 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2011
- Montaj Tipi
- Surface Mount
- Fet Feature
- Logic Level Gate
- Turn Off Delay Time
- 65 ns
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Fet Type
- 2 P-Channel (Dual)
- Terminal Sayısı
- 6
- Gate To Source Voltage Vgs
- 8V
- Rise Time
- 30ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Continuous Drain Current Id
- 220mA
- Number Of Elements
- 2
- Max Power Dissipation
- 500mW
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- Ambalaj
- Tape & Reel (TR)
- Transistor Application
- SWITCHING
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
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