Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 30V
- Terminal Formu
- FLAT
- Vgsth Max Id
- 1.1V @ 250μA
- Power Max
- 500mW
- Terminal Kaplaması
- Tin (Sn)
- Gate Charge Qg Max Vgs
- 0.68nC @ 4.5V
- Ds Breakdown Voltagemin
- 30V
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 400mA
- Reference Standard
- AEC-Q101; IEC-60134
- Rds On Max Id Vgs
- 1.4 Ω @ 350mA, 4.5V
- Jesd30 Code
- R-PDSO-F6
- JESD-609 Kodu
- e3
- Kılıf / Paket
- SOT-563, SOT-666
- Transistor Element Material
- SILICON
- Yüzey Montaj
- YES
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Pin Sayısı
- 6
- Fet Type
- 2 N-Channel (Dual)
- Terminal Sayısı
- 6
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2011
- Drain Currentmax Abs Id
- 0.4A
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Fet Feature
- Logic Level Gate
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipationmax Abs
- 0.39W
- Input Capacitance Ciss Max Vds
- 50pF @ 15V
- Fabrika Tedarik Süresi
- 4 Weeks
- Number Of Elements
- 2
- Transistor Application
- SWITCHING
- Parça Durumu
- Active
- Ambalaj
- Tape & Reel (TR)
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