Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yüzey Montaj
- YES
- Power Dissipation
- 445mW
- Ambient Temperature Range High
- 150°C
- Pin Sayısı
- 6
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Jesd30 Code
- R-PDSO-G6
- JESD-609 Kodu
- e3
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Reference Standard
- AEC-Q101; IEC-60134
- RoHS Durumu
- ROHS3 Compliant
- Max Junction Temperature Tj
- 150°C
- Drain To Source Breakdown Voltage
- 30V
- Rds On Max Id Vgs
- 1.4 Ω @ 350mA, 4.5V
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 30V
- Terminal Formu
- GULL WING
- Vgsth Max Id
- 1.1V @ 250μA
- Gate Charge Qg Max Vgs
- 0.68nC @ 4.5V
- Terminal Kaplaması
- Tin (Sn)
- Turn On Delay Time
- 15 ns
- Number Of Elements
- 2
- Transistor Application
- SWITCHING
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Active
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fabrika Tedarik Süresi
- 4 Weeks
- Input Capacitance Ciss Max Vds
- 50pF @ 15V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2011
- Montaj Tipi
- Surface Mount
- Turn Off Delay Time
- 69 ns
- Drain Currentmax Abs Id
- 0.35A
- Fet Feature
- Logic Level Gate
- Gate To Source Voltage Vgs
- 8V
- Fet Type
- 2 N-Channel (Dual)
- Terminal Sayısı
- 6
- Number Of Channels
- 2
- Continuous Drain Current Id
- 350mA
- Yükseklik
- 1.1mm
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