NX3008CBKV,115

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Type

N and P-Channel

Terminal Sayısı

6

Drain Currentmax Abs Id

0.4A

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Feature

Logic Level Gate

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2011

Fabrika Tedarik Süresi

4 Weeks

Input Capacitance Ciss Max Vds

50pF @ 15V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Pozisyonu

DUAL

Additional Feature

LOW THRESHOLD

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Parça Durumu

Active

Number Of Elements

2

Ds Breakdown Voltagemin

30V

Gate Charge Qg Max Vgs

0.68nC @ 4.5V

Terminal Kaplaması

Tin (Sn)

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

30V

Terminal Formu

FLAT

Vgsth Max Id

1.1V @ 250μA

Power Max

500mW

Rds On Max Id Vgs

1.4 Ω @ 350mA, 4.5V

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

400mA 220mA

JESD-609 Kodu

e3

Kılıf / Paket

SOT-563, SOT-666

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-F6

Seri

Automotive, AEC-Q101, TrenchMOS™

Pin Sayısı

6

Yüzey Montaj

YES