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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Fet Type
- N and P-Channel
- Terminal Sayısı
- 6
- Drain Currentmax Abs Id
- 0.4A
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Fet Feature
- Logic Level Gate
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2011
- Fabrika Tedarik Süresi
- 4 Weeks
- Input Capacitance Ciss Max Vds
- 50pF @ 15V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Pozisyonu
- DUAL
- Additional Feature
- LOW THRESHOLD
- Transistor Application
- SWITCHING
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Active
- Number Of Elements
- 2
- Ds Breakdown Voltagemin
- 30V
- Gate Charge Qg Max Vgs
- 0.68nC @ 4.5V
- Terminal Kaplaması
- Tin (Sn)
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 30V
- Terminal Formu
- FLAT
- Vgsth Max Id
- 1.1V @ 250μA
- Power Max
- 500mW
- Rds On Max Id Vgs
- 1.4 Ω @ 350mA, 4.5V
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 400mA 220mA
- JESD-609 Kodu
- e3
- Kılıf / Paket
- SOT-563, SOT-666
- Transistor Element Material
- SILICON
- Jesd30 Code
- R-PDSO-F6
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Pin Sayısı
- 6
- Yüzey Montaj
- YES
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