NX3008CBKS,115

Specifications

Input Capacitance Ciss Max Vds

50pF @ 15V

Fabrika Tedarik Süresi

4 Weeks

Additional Feature

LOW THRESHOLD

Terminal Pozisyonu

DUAL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Parça Durumu

Active

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Number Of Elements

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Type

N and P-Channel

Terminal Sayısı

6

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Feature

Logic Level Gate

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain Currentmax Abs Id

0.35A

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2011

Transistor Element Material

SILICON

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

JESD-609 Kodu

e3

Jesd30 Code

R-PDSO-G6

Pin Sayısı

6

Seri

Automotive, AEC-Q101, TrenchMOS™

Yüzey Montaj

YES

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

0.68nC @ 4.5V

Ds Breakdown Voltagemin

30V

Terminal Formu

GULL WING

Vgsth Max Id

1.1V @ 250μA

Power Max

445mW

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

30V

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Rds On Max Id Vgs

1.4 Ω @ 350mA, 4.5V

Current Continuous Drain Id25

350mA 200mA

RoHS Durumu

ROHS3 Compliant