Volume pricing
- 1+ pcs$0.04
- 500+ pcs$0.03
- 1000+ pcs$0.02
- 2000+ pcs$0.02
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Ds Breakdown Voltagemin
- 60V
- Ambalaj
- Tape & Reel (TR)
- Terminal Sayısı
- 6
- Rds On Max Id Vgs
- 3.5 Ω @ 200mA, 10V
- Number Of Elements
- 2
- Fet Feature
- Standard
- Reference Standard
- AEC-Q101; IEC-60134
- Jesd30 Code
- R-PDSO-G6
- Drain Currentmax Abs Id
- 0.21A
- Yayın Yılı
- 2016
- Operating Mode
- ENHANCEMENT MODE
- Power Max
- 320mW
- Current Continuous Drain Id25
- 210mA Ta
- Fet Type
- 2 N-Channel (Dual)
- Transistor Element Material
- SILICON
- Yüzey Montaj
- YES
- Terminal Formu
- GULL WING
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance Ciss Max Vds
- 20pF @ 30V
- Fabrika Tedarik Süresi
- 4 Weeks
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Parça Durumu
- Active
- Drain To Source Voltage Vdss
- 60V
- Montaj Tipi
- Surface Mount
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Pin Sayısı
- 6
- RoHS Durumu
- ROHS3 Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 1.5V @ 250μA
- Gate Charge Qg Max Vgs
- 0.7nC @ 10V
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