Volume pricing
- 1+ pcs$0.46
- 10+ pcs$0.43
- 100+ pcs$0.41
- 500+ pcs$0.39
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rise Time
- 19.8ns
- Operating Mode
- ENHANCEMENT MODE
- Drainsource On Resistancemax
- 0.0094Ohm
- Pin Sayısı
- 8
- Ambalaj
- Tape & Reel (TR)
- Turn Off Delay Time
- 20.5 ns
- Gate To Source Voltage Vgs
- 15V
- Reference Standard
- AEC-Q101; IEC-60134
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fet Feature
- Logic Level Gate
- Jesd30 Code
- R-PDSO-G6
- Pin Sayısı
- 8
- Transistor Application
- SWITCHING
- Case Connection
- DRAIN
- Kurşunsuz
- Lead Free
- Fabrika Tedarik Süresi
- 12 Weeks
- Max Power Dissipation
- 53W
- Gate Charge Qg Max Vgs
- 15.7nC @ 5V
- Seri
- TrenchMOS™
- Number Of Elements
- 2
- Terminal Sayısı
- 6
- Kılıf / Paket
- SOT-1205, 8-LFPAK56
- RoHS Durumu
- ROHS3 Compliant
- Fall Time Typ
- 18.2 ns
- Rds On Max Id Vgs
- 8m Ω @ 10A, 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 40V
- Input Capacitance Ciss Max Vds
- 2110pF @ 25V
- Terminal Formu
- GULL WING
- Turn On Delay Time
- 10.8 ns
- Drain To Source Voltage Vdss
- 40V
- Continuous Drain Current Id
- 30A
- Yayın Yılı
- 2013
- Power Dissipation
- 53W
- Transistor Element Material
- SILICON
- Element Configuration
- Dual
- Montaj
- Surface Mount
- Vgsth Max Id
- 2.1V @ 1mA
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