BUK9K89-100E,115

Specifications

Terminal Sayısı

6

Contact Plating

Tin

Seri

Automotive, AEC-Q101, TrenchMOS™

Number Of Elements

2

REACH Uyumluluk Kodu

not_compliant

Gate Charge Qg Max Vgs

16.8nC @ 10V

Fabrika Tedarik Süresi

12 Weeks

Max Power Dissipation

38W

Fall Time Typ

12.1 ns

Number Of Channels

2

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

SOT-1205, 8-LFPAK56

Continuous Drain Current Id

12.5A

Terminal Formu

GULL WING

Turn On Delay Time

3.6 ns

Yüzey Montaj

YES

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

1108pF @ 25V

Rds On Max Id Vgs

85m Ω @ 5A, 10V

Vgsth Max Id

2.1V @ 1mA

Fet Type

2 N-Channel (Dual)

Parça Durumu

Active

Element Configuration

Dual

Yayın Yılı

2013

Power Dissipation

38W

Transistor Element Material

SILICON

Max Dual Supply Voltage

100V

Pulsed Drain Currentmax Idm

50A

Turn Off Delay Time

22.1 ns

Pin Sayısı

8

Additional Feature

AVALANCHE RATED

Ambalaj

Tape & Reel (TR)

Rise Time

5.8ns

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Reference Standard

AEC-Q101; IEC-60134

Gate To Source Voltage Vgs

10V

Fet Feature

Logic Level Gate