Volume pricing
- 1+ pcs$3.08
- 10+ pcs$2.90
- 100+ pcs$2.74
- 500+ pcs$2.58
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Voltage Vdss
- 40V
- Continuous Drain Current Id
- 40A
- Terminal Formu
- GULL WING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ds Breakdown Voltagemin
- 40V
- Input Capacitance Ciss Max Vds
- 3000pF @ 25V
- Rds On Max Id Vgs
- 6.1m Ω @ 10A, 10V
- Fet Type
- 2 N-Channel (Dual)
- Vgsth Max Id
- 2.1V @ 1mA
- Parça Durumu
- Active
- Montaj
- Surface Mount
- Yayın Yılı
- 2013
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 6
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Number Of Elements
- 2
- Gate Charge Qg Max Vgs
- 22.2nC @ 5V
- Power Max
- 64W
- Fabrika Tedarik Süresi
- 12 Weeks
- Max Power Dissipation
- 64W
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- SOT-1205, 8-LFPAK56
- Fet Feature
- Logic Level Gate
- Case Connection
- DRAIN
- Pin Sayısı
- 8
- Transistor Application
- SWITCHING
- Jesd30 Code
- R-PDSO-G6
- Pulsed Drain Currentmax Idm
- 265A
- Drainsource On Resistancemax
- 0.0072Ohm
- Pin Sayısı
- 8
- Ambalaj
- Tape & Reel (TR)
- Operating Mode
- ENHANCEMENT MODE
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating Eas
- 125 mJ
- Reference Standard
- AEC-Q101; IEC-60134
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