BUK9K6R2-40E,115

Specifications

Terminal Sayısı

6

Number Of Elements

2

Seri

Automotive, AEC-Q101, TrenchMOS™

Gate Charge Qg Max Vgs

35.4nC @ 10V

Terminal Kaplaması

Tin (Sn)

Max Power Dissipation

68W

Fabrika Tedarik Süresi

12 Weeks

Fall Time Typ

19.8 ns

Number Of Channels

2

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

SOT-1205, 8-LFPAK56

Continuous Drain Current Id

40A

Yüzey Montaj

YES

Turn On Delay Time

6 ns

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

3281pF @ 25V

Drain To Source Breakdown Voltage

40V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

6m Ω @ 25A, 10V

Parça Durumu

Active

Fet Type

2 N-Channel (Dual)

Vgsth Max Id

2.1V @ 1mA

Element Configuration

Dual

Transistor Element Material

SILICON

Power Dissipation

68W

Yayın Yılı

2013

Turn Off Delay Time

44.4 ns

Max Dual Supply Voltage

40V

Ambalaj

Tape & Reel (TR)

Additional Feature

AVALANCHE RATED

Pin Sayısı

8

Operating Mode

ENHANCEMENT MODE

Rise Time

7.1ns

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Reference Standard

AEC-Q101; IEC-60134

Avalanche Energy Rating Eas

166 mJ

Gate To Source Voltage Vgs

10V

Fet Feature

Logic Level Gate