BUK9K52-60E,115

Specifications

Input Capacitance Ciss Max Vds

725pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

49m Ω @ 5A, 10V

Continuous Drain Current Id

16A

Transistor Element Material

SILICON

Yayın Yılı

2014

Fet Type

2 N-Channel (Dual)

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

2

Contact Plating

Tin

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

SOT-1205, 8-LFPAK56

Number Of Channels

2

Fet Feature

Logic Level Gate

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

20

Transistor Application

SWITCHING

Jesd30 Code

R-PSSO-G4

Ambalaj

Tape & Reel (TR)

Pin Sayısı

8

Drainsource On Resistancemax

0.055Ohm

Rise Time

10.1ns

Turn Off Delay Time

10.7 ns

Reference Standard

AEC-Q101; IEC-60134

Tepe Reflow Sıcaklığı (°C)

260

Gate To Source Voltage Vgs

10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Yüzey Montaj

YES

Terminal Formu

GULL WING

Turn On Delay Time

6.2 ns

Element Configuration

Dual

Power Dissipation

32W

Parça Durumu

Active

Vgsth Max Id

2.1V @ 1mA

Gate Charge Qg Max Vgs

10nC @ 10V

REACH Uyumluluk Kodu

not_compliant

Max Power Dissipation

32W

Terminal Sayısı

4

Seri

Automotive, AEC-Q101, TrenchMOS™

Terminal Pozisyonu

SINGLE