Volume pricing
- 1+ pcs$2.22
- 10+ pcs$2.09
- 100+ pcs$1.98
- 500+ pcs$1.86
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- 2 N-Channel (Dual)
- Vgsth Max Id
- 2.1V @ 1mA
- Parça Durumu
- Active
- Yayın Yılı
- 2013
- Power Dissipation
- 53W
- Transistor Element Material
- SILICON
- Element Configuration
- Dual
- Turn On Delay Time
- 4 ns
- Terminal Formu
- GULL WING
- Yüzey Montaj
- YES
- Continuous Drain Current Id
- 21A
- Rds On Max Id Vgs
- 42m Ω @ 5A, 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 100V
- Input Capacitance Ciss Max Vds
- 2152pF @ 25V
- Number Of Channels
- 2
- Fall Time Typ
- 27.75 ns
- Kılıf / Paket
- SOT-1205, 8-LFPAK56
- RoHS Durumu
- ROHS3 Compliant
- Contact Plating
- Tin
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Number Of Elements
- 2
- Terminal Sayısı
- 6
- Max Power Dissipation
- 53W
- Fabrika Tedarik Süresi
- 12 Weeks
- Gate Charge Qg Max Vgs
- 33.5nC @ 10V
- REACH Uyumluluk Kodu
- not_compliant
- Case Connection
- DRAIN
- Jesd30 Code
- R-PDSO-G6
- Pin Sayısı
- 8
- Transistor Application
- SWITCHING
- JESD-609 Kodu
- e3
- Fet Feature
- Logic Level Gate
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Gate To Source Voltage Vgs
- 10V
- Reference Standard
- AEC-Q101; IEC-60134
- Max Dual Supply Voltage
- 100V
- Turn Off Delay Time
- 41.34 ns
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