BUK9K32-100EX

Specifications

Rise Time

22ns

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.033Ohm

Pin Sayısı

8

Additional Feature

AVALANCHE RATED

Ambalaj

Tape & Reel (TR)

Pulsed Drain Currentmax Idm

106A

Turn Off Delay Time

39.5 ns

Gate To Source Voltage Vgs

15V

Avalanche Energy Rating Eas

74 mJ

Reference Standard

AEC-Q101; IEC-60134

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Fet Feature

Logic Level Gate

Jesd30 Code

R-PSSO-G4

Transistor Application

SWITCHING

Case Connection

DRAIN

Fabrika Tedarik Süresi

12 Weeks

Max Power Dissipation

64W

Gate Charge Qg Max Vgs

27.3nC @ 5V

Terminal Pozisyonu

SINGLE

Seri

TrenchMOS™

Number Of Elements

2

Terminal Sayısı

4

Kılıf / Paket

SOT-1205, 8-LFPAK56

RoHS Durumu

ROHS3 Compliant

Number Of Channels

2

Fall Time Typ

23.1 ns

Rds On Max Id Vgs

31m Ω @ 5A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

100V

Input Capacitance Ciss Max Vds

3168pF @ 25V

Terminal Formu

GULL WING

Turn On Delay Time

12.6 ns

Drain To Source Voltage Vdss

100V

Continuous Drain Current Id

26A

Yayın Yılı

2013

Transistor Element Material

SILICON

Element Configuration

Dual