Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Reference Standard
- AEC-Q101; IEC-60134
- Avalanche Energy Rating Eas
- 12.6 mJ
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Ambalaj
- Tape & Reel (TR)
- Drainsource On Resistancemax
- 0.159Ohm
- Pin Sayısı
- 8
- Pulsed Drain Currentmax Idm
- 34A
- Jesd30 Code
- R-PDSO-G6
- Transistor Application
- SWITCHING
- Pin Sayısı
- 8
- Case Connection
- DRAIN
- Kurşunsuz
- Lead Free
- Fet Feature
- Logic Level Gate
- Kılıf / Paket
- SOT-1205, 8-LFPAK56
- RoHS Durumu
- ROHS3 Compliant
- Power Max
- 32W
- Fabrika Tedarik Süresi
- 12 Weeks
- Max Power Dissipation
- 32W
- Gate Charge Qg Max Vgs
- 7.4nC @ 5V
- Number Of Elements
- 2
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Terminal Sayısı
- 6
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2013
- Montaj
- Surface Mount
- Parça Durumu
- Active
- Fet Type
- 2 N-Channel (Dual)
- Vgsth Max Id
- 2.1V @ 1mA
- Rds On Max Id Vgs
- 159m Ω @ 5A, 5V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ds Breakdown Voltagemin
- 100V
- Input Capacitance Ciss Max Vds
- 755pF @ 25V
- Terminal Formu
- GULL WING
- Continuous Drain Current Id
- 8.5A
- Drain To Source Voltage Vdss
- 100V
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