Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 13.6nC @ 10V
- Fabrika Tedarik Süresi
- 12 Weeks
- Power Max
- 38W
- Max Power Dissipation
- 38W
- Terminal Sayısı
- 6
- Number Of Elements
- 2
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- SOT-1205, 8-LFPAK56
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ds Breakdown Voltagemin
- 100V
- Input Capacitance Ciss Max Vds
- 811pF @ 25V
- Rds On Max Id Vgs
- 82.5m Ω @ 5A, 10V
- Continuous Drain Current Id
- 13A
- Drain To Source Voltage Vdss
- 100V
- Terminal Formu
- GULL WING
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2015
- Parça Durumu
- Active
- Fet Type
- 2 N-Channel (Dual)
- Vgsth Max Id
- 4V @ 1mA
- Montaj
- Surface Mount
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 8
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 51A
- Reference Standard
- AEC-Q101; IEC-60134
- Avalanche Energy Rating Eas
- 19.5 mJ
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fet Feature
- Standard
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Application
- SWITCHING
- Pin Sayısı
- 8
- Jesd30 Code
- R-PDSO-G6
- Case Connection
- DRAIN
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