BUK7K5R1-30E,115

Specifications

Case Connection

DRAIN

Jesd30 Code

R-PDSO-G6

Pin Sayısı

8

Transistor Application

SWITCHING

JESD-609 Kodu

e3

Fet Feature

Logic Level Gate

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Reference Standard

AEC-Q101; IEC-60134

Max Dual Supply Voltage

30V

Turn Off Delay Time

19.5 ns

Rise Time

12.5ns

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.0051Ohm

Pin Sayısı

8

Additional Feature

AVALANCHE RATED

Ambalaj

Tape & Reel (TR)

Fet Type

2 N-Channel (Dual)

Vgsth Max Id

4V @ 1mA

Parça Durumu

Active

Yayın Yılı

2013

Transistor Element Material

SILICON

Element Configuration

Dual

Turn On Delay Time

9.5 ns

Terminal Formu

GULL WING

Yüzey Montaj

YES

Continuous Drain Current Id

40A

Rds On Max Id Vgs

5.1m Ω @ 10A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

30V

Input Capacitance Ciss Max Vds

2352pF @ 25V

Number Of Channels

2

Fall Time Typ

13 ns

Kılıf / Paket

SOT-1205, 8-LFPAK56

RoHS Durumu

ROHS3 Compliant

Seri

Automotive, AEC-Q101, TrenchMOS™

Contact Plating

Tin

Number Of Elements

2