Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 12 Weeks
- Max Power Dissipation
- 32W
- Gate Charge Qg Max Vgs
- 9.2nC @ 10V
- Number Of Elements
- 2
- Terminal Sayısı
- 6
- Kılıf / Paket
- SOT-1205, 8-LFPAK56
- RoHS Durumu
- ROHS3 Compliant
- Number Of Channels
- 2
- Fall Time Typ
- 5.4 ns
- Rds On Max Id Vgs
- 45m Ω @ 5A, 10V
- Input Capacitance Ciss Max Vds
- 535pF @ 25V
- Ds Breakdown Voltagemin
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn On Delay Time
- 4.3 ns
- Terminal Formu
- GULL WING
- Continuous Drain Current Id
- 15.4A
- Drain To Source Voltage Vdss
- 60V
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2013
- Element Configuration
- Dual
- Montaj
- Surface Mount
- Parça Durumu
- Active
- Vgsth Max Id
- 4V @ 1mA
- Fet Type
- 2 N-Channel (Dual)
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 5.1ns
- Ambalaj
- Tape & Reel (TR)
- Drainsource On Resistancemax
- 0.045Ohm
- Pin Sayısı
- 8
- Turn Off Delay Time
- 8.4 ns
- Pulsed Drain Currentmax Idm
- 71A
- Gate To Source Voltage Vgs
- 20V
- Reference Standard
- AEC-Q101; IEC-60134
- Avalanche Energy Rating Eas
- 11.6 mJ
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Montaj Tipi
- Surface Mount
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Fet Feature
- Standard
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