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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- SOT-1205, 8-LFPAK56
- Terminal Sayısı
- 6
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Number Of Elements
- 2
- Gate Charge Qg Max Vgs
- 30.1nC @ 10V
- Max Power Dissipation
- 64W
- Fabrika Tedarik Süresi
- 12 Weeks
- Power Max
- 64W
- Fet Type
- 2 N-Channel (Dual)
- Vgsth Max Id
- 4V @ 1mA
- Parça Durumu
- Active
- Montaj
- Surface Mount
- Yayın Yılı
- 2015
- Transistor Element Material
- SILICON
- Drain To Source Voltage Vdss
- 60V
- Continuous Drain Current Id
- 40A
- Terminal Formu
- GULL WING
- Input Capacitance Ciss Max Vds
- 2163pF @ 25V
- Ds Breakdown Voltagemin
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 10m Ω @ 10A, 10V
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Reference Standard
- AEC-Q101; IEC-60134
- Pulsed Drain Currentmax Idm
- 213A
- Pin Sayısı
- 8
- Drainsource On Resistancemax
- 0.01Ohm
- Ambalaj
- Tape & Reel (TR)
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- DRAIN
- Pin Sayısı
- 8
- Transistor Application
- SWITCHING
- Jesd30 Code
- R-PDSO-G6
- Fet Feature
- Standard
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
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