Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn On Delay Time
- 13 ns
- Terminal Formu
- FLAT
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Rds On Max Id Vgs
- 7.5 Ω @ 100mA, 10V
- Drain To Source Voltage Vdss
- 50V
- Gate Charge Qg Max Vgs
- 0.35nC @ 5V
- Gate To Source Voltage Vgs
- 20V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 170mA
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pin Sayısı
- 6
- Drain To Source Breakdown Voltage
- -50V
- Turn Off Delay Time
- 48 ns
- Parça Durumu
- Active
- Fall Time Typ
- 25 ns
- Number Of Elements
- 2
- Operating Mode
- ENHANCEMENT MODE
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Radyasyon Dayanımı
- No
- Montaj Tipi
- Surface Mount
- Input Capacitance Ciss Max Vds
- 36pF @ 25V
- Fabrika Tedarik Süresi
- 4 Weeks
- Transistor Application
- SWITCHING
- Fet Feature
- Logic Level Gate
- JESD-609 Kodu
- e3
- Rise Time
- 11ns
- Terminal Sayısı
- 6
- Contact Plating
- Tin
- Yayın Yılı
- 2006
- Vgsth Max Id
- 2.1V @ 250μA
- Max Power Dissipation
- 500mW
- Drainsource On Resistancemax
- 8.5Ohm
- Pin Sayısı
- 6
- Yüzey Montaj
- YES
- Ambalaj
- Tape & Reel (TR)
- Kurşunsuz
- Lead Free
- Drain Currentmax Abs Id
- 0.17A
- RoHS Durumu
- ROHS3 Compliant
- Power Dissipation
- 330mW
- Transistor Element Material
- SILICON
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