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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2007
- Terminal Sayısı
- 6
- Vgsth Max Id
- 2.1V @ 250μA
- Ds Breakdown Voltagemin
- 50V
- Fabrika Tedarik Süresi
- 4 Weeks
- Transistor Application
- SWITCHING
- Fet Feature
- Logic Level Gate
- JESD-609 Kodu
- e3
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Tepe Reflow Süresi (maks. sn)
- 30
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Type
- 2 P-Channel (Dual)
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Pin Sayısı
- 6
- Drainsource On Resistancemax
- 8.5Ohm
- Ambalaj
- Tape & Reel (TR)
- Yüzey Montaj
- YES
- Current Continuous Drain Id25
- 160mA
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Tepe Reflow Sıcaklığı (°C)
- 260
- Pin Sayısı
- 6
- Drain To Source Voltage Vdss
- 50V
- Rds On Max Id Vgs
- 7.5 Ω @ 100mA, 10V
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Terminal Formu
- GULL WING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 0.35nC @ 5V
- Montaj Tipi
- Surface Mount
- Power Max
- 445mW
- Input Capacitance Ciss Max Vds
- 36pF @ 25V
- Number Of Elements
- 2
- Parça Durumu
- Active
- Terminal Kaplaması
- Tin (Sn)
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Operating Mode
- ENHANCEMENT MODE
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