Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Continuous Drain Id25
- 320mA
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge Qg Max Vgs
- 0.7nC @ 4.5V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Rds On Max Id Vgs
- 1.6 Ω @ 320mA, 10V
- Drain To Source Voltage Vdss
- 60V
- Terminal Formu
- GULL WING
- Power Max
- 445mW
- Input Capacitance Ciss Max Vds
- 56pF @ 10V
- Montaj Tipi
- Surface Mount
- Seri
- Automotive, AEC-Q101, TrenchMOS™
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 2
- Terminal Kaplaması
- Tin (Sn)
- Parça Durumu
- Active
- Vgsth Max Id
- 1.6V @ 250μA
- Terminal Sayısı
- 6
- Yayın Yılı
- 2002
- JESD-609 Kodu
- e3
- Fet Feature
- Logic Level Gate
- Transistor Application
- SWITCHING
- Ds Breakdown Voltagemin
- 60V
- Fabrika Tedarik Süresi
- 4 Weeks
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Type
- 2 N-Channel (Dual)
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Jesd30 Code
- R-PDSO-G6
- RoHS Durumu
- ROHS3 Compliant
- Drain Currentmax Abs Id
- 0.32A
- Transistor Element Material
- SILICON
- Ambalaj
- Tape & Reel (TR)
- Yüzey Montaj
- YES
- Pin Sayısı
- 6
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