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C3 ChipZentronix
BCV64B,215

Nexperia USA Inc.

BCV64B,215

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.45
  • 10+ pcs$0.43
  • 100+ pcs$0.40
  • 500+ pcs$0.38

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Compliant

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Specifications

Terminal Formu
GULL WING
Max Collector Current
100mA
Transistor Type
2 PNP (Dual)
Element Configuration
Dual
Max Breakdown Voltage
6V
Max Power Dissipation
250mW
Number Of Elements
2
Montaj Tipi
Surface Mount
Gain Bandwidth Product
100MHz
Polarity
PNP
Nem Hassasiyeti (MSL)
1 (Unlimited)
Tepe Reflow Süresi (maks. sn)
40
Radyasyon Dayanımı
No
Pin Sayısı
4
Frekans
100MHz
Dc Current Gain Hfe Min Ic Vce
220 @ 2mA 5V / 220 @ 2mA 700mV
Case Connection
COLLECTOR
Parça Durumu
Active
Montaj
Surface Mount
ECCN Kodu
EAR99
Transistor Element Material
SILICON
Collectoremitter Breakdown Voltage
6V
Contact Plating
Tin
Voltage Collector Emitter Breakdown Max
30V 6V
Collector Base Voltage Vcbo
30V
Vcesatmax
0.65 V
Power Dissipation
250mW
Collector Emitter Voltage Vceo
650mV
Ambalaj
Tape & Reel (TR)
Transistor Application
SWITCHING
Fabrika Tedarik Süresi
4 Weeks
Emitter Base Voltage Vebo
6V
Çalışma Sıcaklığı
150°C TJ
JESD-609 Kodu
e3
Yayın Yılı
2010
Pin Sayısı
4
Transition Frequency
200MHz
Vce Saturation Max Ib Ic
650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA
Current Collector Cutoff Max
15nA ICBO
Terminal Sayısı
4

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