Volume pricing
- 1+ pcs$0.35
- 10+ pcs$0.33
- 100+ pcs$0.31
- 500+ pcs$0.29
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Polarity
- NPN
- Gain Bandwidth Product
- 100MHz
- Tepe Reflow Süresi (maks. sn)
- 40
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Dc Current Gain Hfe Min Ic Vce
- 110 @ 2mA 5V / 110 @ 2mA 700mV
- Frekans
- 100MHz
- Case Connection
- COLLECTOR
- Qualification Status
- Not Qualified
- Max Breakdown Voltage
- 6V
- Terminal Formu
- GULL WING
- Element Configuration
- Dual
- Transistor Type
- 2 NPN (Dual)
- Max Collector Current
- 100mA
- Number Of Elements
- 2
- Montaj Tipi
- Surface Mount
- Max Power Dissipation
- 250mW
- JESD-609 Kodu
- e3
- Yayın Yılı
- 2010
- Pin Sayısı
- 4
- Temel Parça No
- BCV63
- Tepe Reflow Sıcaklığı (°C)
- 260
- Current Collector Cutoff Max
- 15nA ICBO
- Vce Saturation Max Ib Ic
- 650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA
- Transition Frequency
- 100MHz
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-253-4, TO-253AA
- Terminal Sayısı
- 4
- Contact Plating
- Tin
- Collectoremitter Breakdown Voltage
- 6V
- Parça Durumu
- Active
- Montaj
- Surface Mount
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 4 Weeks
- Çalışma Sıcaklığı
- 150°C TJ
- Emitter Base Voltage Vebo
- 6V
- Vcesatmax
- 0.65 V
- Power Dissipation
- 250mW
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