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C3 ChipZentronix
BCM857BV,315

Nexperia USA Inc.

BCM857BV,315

Arrays BJT Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Max Breakdown Voltage
45V
Frequency Transition
175MHz
Power Max
300mW
Ambalaj
Tape & Reel (TR)
Pin Sayısı
6
Number Of Elements
2
JESD-609 Kodu
e3
Transistor Application
AMPLIFIER
Parça Durumu
Active
Radyasyon Dayanımı
No
Pin Sayısı
6
Montaj Tipi
Surface Mount
Max Collector Current
100mA
Transition Frequency
175MHz
Collectoremitter Breakdown Voltage
45V
Temel Parça No
BCM857
Transistor Type
2 PNP (Dual) Matched Pair
Kılıf / Paket
SOT-563, SOT-666
Terminal Sayısı
6
Çalışma Sıcaklığı
150°C TJ
Max Power Dissipation
300mW
Montaj
Surface Mount
Vce Saturation Max Ib Ic
400mV @ 5mA, 100mA
Contact Plating
Tin
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collector Emitter Voltage Vceo
400mV
Fabrika Tedarik Süresi
4 Weeks
RoHS Durumu
ROHS3 Compliant
Transistor Element Material
SILICON
Configuration
SEPARATE, 2 ELEMENTS
Polarity
PNP
Dc Current Gain Hfe Min Ic Vce
200 @ 2mA 5V
Yayın Yılı
2009
Collector Base Voltage Vcbo
50V
Emitter Base Voltage Vebo
5V
Current Collector Cutoff Max
15nA ICBO
Terminal Formu
FLAT

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