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BCM856DS,115

Nexperia USA Inc.

BCM856DS,115

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.08
  • 500+ pcs$0.06
  • 1000+ pcs$0.05
  • 2000+ pcs$0.05

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RoHS

Compliant

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Specifications

Dc Current Gain Hfe Min Ic Vce
200 @ 2mA 5V
Polarity
PNP
Terminal Formu
GULL WING
Current Collector Cutoff Max
15nA ICBO
Emitter Base Voltage Vebo
5V
Frekans
175MHz
Collector Base Voltage Vcbo
80V
Yayın Yılı
2008
Kurşunsuz
Lead Free
RoHS Durumu
ROHS3 Compliant
Gain Bandwidth Product
175MHz
Power Dissipation
380mW
Transistor Element Material
SILICON
Vce Saturation Max Ib Ic
400mV @ 5mA, 100mA
Montaj
Surface Mount
Fabrika Tedarik Süresi
4 Weeks
Collector Emitter Voltage Vceo
65V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Contact Plating
Tin
Terminal Sayısı
6
Kılıf / Paket
SC-74, SOT-457
Max Power Dissipation
380mW
Çalışma Sıcaklığı
150°C TJ
Collectoremitter Breakdown Voltage
65V
Transition Frequency
175MHz
Max Collector Current
100mA
Montaj Tipi
Surface Mount
Pin Sayısı
6
Radyasyon Dayanımı
No
Transistor Type
2 PNP (Dual) Matched Pair
Temel Parça No
BCM856
Collectoremitter Saturation Voltage
-200mV
JESD-609 Kodu
e3
Transistor Application
AMPLIFIER
Number Of Elements
2
Pin Sayısı
6
Parça Durumu
Active
Tepe Reflow Süresi (maks. sn)
30
Tepe Reflow Sıcaklığı (°C)
260
Ambalaj
Tape & Reel (TR)

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