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BCM847DS,135

Nexperia USA Inc.

BCM847DS,135

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.45
  • 10+ pcs$0.43
  • 100+ pcs$0.40
  • 500+ pcs$0.38

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RoHS

Compliant

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Specifications

Collector Emitter Voltage Vceo
45V
Dc Current Gain Hfe Min Ic Vce
200 @ 2mA 5V
ECCN Kodu
EAR99
Element Configuration
Dual
Yayın Yılı
2009
Tepe Reflow Süresi (maks. sn)
30
Ambalaj
Tape & Reel (TR)
Tepe Reflow Sıcaklığı (°C)
260
Terminal Formu
GULL WING
Collector Base Voltage Vcbo
50V
Pin Sayısı
6
Current Collector Cutoff Max
15nA ICBO
Transistor Application
AMPLIFIER
Collectoremitter Breakdown Voltage
45V
Çalışma Sıcaklığı
150°C TJ
Montaj Tipi
Surface Mount
Max Power Dissipation
380mW
Max Collector Current
100mA
Kılıf / Paket
SC-74, SOT-457
Nem Hassasiyeti (MSL)
1 (Unlimited)
Gain Bandwidth Product
250MHz
Vce Saturation Max Ib Ic
400mV @ 5mA, 100mA
Temel Parça No
BCM847
Radyasyon Dayanımı
No
Transistor Element Material
SILICON
JESD-609 Kodu
e3
Transistor Type
2 NPN (Dual) Matched Pair
Terminal Sayısı
6
RoHS Durumu
ROHS3 Compliant
Power Dissipation
380mW
Fabrika Tedarik Süresi
4 Weeks
Emitter Base Voltage Vebo
6V
Frekans
250MHz
Max Breakdown Voltage
45V
Transition Frequency
250MHz
Parça Durumu
Active
Pin Sayısı
6
Case Connection
ISOLATED
Montaj
Surface Mount
Contact Plating
Tin

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