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C3 ChipZentronix
BC857QASZ

Nexperia USA Inc.

BC857QASZ

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.09
  • 500+ pcs$0.06
  • 1000+ pcs$0.05
  • 2000+ pcs$0.05

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RoHS

Compliant

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Specifications

Collectoremitter Breakdown Voltage
45V
Frequency Transition
100MHz
Seri
Automotive, AEC-Q101
Kılıf / Paket
6-XFDFN Exposed Pad
Pin Sayısı
8
Max Collector Current
100mA
Ambalaj
Cut Tape (CT)
Polaritychannel Type
PNP
Montaj Tipi
Surface Mount
Reference Standard
AEC-Q101; IEC-60134
Dc Current Gain Hfe Min Ic Vce
200 @ 2mA 5V
Yayın Yılı
2015
Pin Sayısı
6
RoHS Durumu
ROHS3 Compliant
Contact Plating
Tin
Max Breakdown Voltage
45V
Vce Saturation Max Ib Ic
100mV @ 2mA, 5V
Emitter Base Voltage Vebo
6V
Collector Base Voltage Vcbo
50V
Case Connection
COLLECTOR
Current Collector Cutoff Max
15nA ICBO
Max Power Dissipation
350mW
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Terminal Formu
NO LEAD
Transistor Element Material
SILICON
Çalışma Sıcaklığı
150°C TJ
Configuration
SEPARATE, 2 ELEMENTS
Montaj
Surface Mount
Power Max
350mW
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Parça Durumu
Active
Fabrika Tedarik Süresi
4 Weeks
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Application
SWITCHING
Transition Frequency
100MHz
Terminal Sayısı
6
Jesd30 Code
R-PDSO-N6
Collector Emitter Voltage Vceo
100mV
Transistor Type
2 PNP (Dual)
Number Of Elements
2

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