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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Current Collector Cutoff Max
- 15nA ICBO
- Gain Bandwidth Product
- 100MHz
- Radyasyon Dayanımı
- No
- Forward Voltage
- 410mV
- Transistor Element Material
- SILICON
- Collectoremitter Breakdown Voltage
- 65V
- Power Dissipation
- 300mW
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Max Forward Surge Current Ifsm
- 100mA
- Collector Base Voltage Vcbo
- 80V
- Kurşunsuz
- Lead Free
- Number Of Elements
- 2
- Tepe Reflow Sıcaklığı (°C)
- 260
- Ambalaj
- Tape & Reel (TR)
- Transistor Type
- 2 PNP (Dual)
- JESD-609 Kodu
- e3
- Parça Durumu
- Active
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Yayın Yılı
- 2009
- Frekans
- 100MHz
- Max Breakdown Voltage
- 65V
- Vce Saturation Max Ib Ic
- 300mV @ 5mA, 100mA
- Fabrika Tedarik Süresi
- 4 Weeks
- Jesd30 Code
- R-PDSO-G6
- Reach Svhc
- No SVHC
- Max Collector Current
- 100mA
- Terminal Formu
- GULL WING
- Contact Plating
- Tin
- ECCN Kodu
- EAR99
- Max Power Dissipation
- 300mW
- Emitter Base Voltage Vebo
- 6V
- Polarity
- NPN, PNP
- Çalışma Sıcaklığı
- 150°C TJ
- Montaj Tipi
- Surface Mount
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 2mA 5V
- Tepe Reflow Süresi (maks. sn)
- 30
- Montaj
- Surface Mount
- Seri
- Automotive, AEC-Q101
- Pin Sayısı
- 6
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