Volume pricing
- 1+ pcs$0.06
- 10+ pcs$0.05
- 100+ pcs$0.05
- 500+ pcs$0.05
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Configuration
- SEPARATE, 2 ELEMENTS
- Collector Base Voltage Vcbo
- 50V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Emitter Base Voltage Vebo
- 6V
- Frequency Transition
- 100MHz
- Max Power Dissipation
- 350mW
- Collectoremitter Breakdown Voltage
- 45V
- Contact Plating
- Tin
- Terminal Formu
- NO LEAD
- Transistor Element Material
- SILICON
- Jesd30 Code
- R-PDSO-N6
- Fabrika Tedarik Süresi
- 4 Weeks
- Vce Saturation Max Ib Ic
- 300mV @ 5mA, 100mA
- Max Collector Current
- 100mA
- Current Collector Cutoff Max
- 15nA ICBO
- Transistor Application
- SWITCHING
- Reference Standard
- AEC-Q101; IEC-60134
- Power Max
- 350mW
- Max Breakdown Voltage
- 45V
- Polaritychannel Type
- NPN
- Transition Frequency
- 100MHz
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2015
- Terminal Sayısı
- 6
- Kılıf / Paket
- 6-XFDFN Exposed Pad
- Collector Emitter Voltage Vceo
- 300mV
- Parça Durumu
- Active
- Ambalaj
- Cut Tape (CT)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Case Connection
- COLLECTOR
- Number Of Elements
- 2
- Pin Sayısı
- 6
- Transistor Type
- 2 NPN (Dual)
- Seri
- Automotive, AEC-Q101
- Montaj
- Surface Mount
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 2mA 5V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- 150°C TJ
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