Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 300mW
- Gain Bandwidth Product
- 100MHz
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Emitter Voltage Vceo
- 45V
- Fabrika Tedarik Süresi
- 4 Weeks
- Genişlik
- 1.3mm
- Contact Plating
- Tin
- Reach Svhc
- No SVHC
- Montaj
- Surface Mount
- Vce Saturation Max Ib Ic
- 300mV @ 5mA, 100mA
- Yükseklik
- 600μm
- Emitter Base Voltage Vebo
- 5V
- Current Collector Cutoff Max
- 15nA ICBO
- Terminal Formu
- FLAT
- Uzunluk
- 1.7mm
- Yayın Yılı
- 2001
- Collector Base Voltage Vcbo
- 50V
- Frekans
- 100MHz
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 2mA 5V
- Polarity
- NPN
- Seri
- Automotive, AEC-Q101
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- Transistor Application
- SWITCHING
- JESD-609 Kodu
- e3
- Pin Sayısı
- 6
- Number Of Elements
- 2
- Weight
- 4.535924g
- Element Configuration
- Dual
- Ambalaj
- Tape & Reel (TR)
- Tepe Reflow Süresi (maks. sn)
- 40
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Power Dissipation
- 300mW
- Çalışma Sıcaklığı
- 150°C TJ
- Kılıf / Paket
- SOT-563, SOT-666
- Terminal Sayısı
- 6
- Transistor Type
- 2 NPN (Dual)
- Collectoremitter Saturation Voltage
- 300mV
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