Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Dual Supply Voltage
- 60V
- Pin Sayısı
- 6
- Radyasyon Dayanımı
- No
- Input Capacitance Ciss Max Vds
- 50pF @ 10V
- Contact Plating
- Tin
- Continuous Drain Current Id
- 320mA
- Fall Time Typ
- 5 ns
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 420mW
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate To Source Voltage Vgs
- 20V
- Rds On Max Id Vgs
- 1.6 Ω @ 500mA, 10V
- Turn Off Delay Time
- 10 ns
- Çalışma Sıcaklığı
- 150°C TJ
- JESD-609 Kodu
- e3
- Fet Feature
- Logic Level Gate
- Montaj Tipi
- Surface Mount
- Yüzey Montaj
- YES
- Power Max
- 420mW
- Vgsth Max Id
- 2.4V @ 250μA
- Terminal Sayısı
- 6
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Fabrika Tedarik Süresi
- 4 Weeks
- Power Dissipation
- 320mW
- Pin Sayısı
- 6
- Parça Durumu
- Active
- Operating Mode
- ENHANCEMENT MODE
- Gate Charge Qg Max Vgs
- 0.8nC @ 4.5V
- RoHS Durumu
- ROHS3 Compliant
- Terminal Formu
- GULL WING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn On Delay Time
- 3 ns
- Ambalaj
- Cut Tape (CT)
- Fet Type
- 2 N-Channel (Dual)
- Rise Time
- 4ns
- Drain To Source Breakdown Voltage
- 60V
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2010
- Number Of Elements
- 2
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