Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 20V
- Vgsth Max Id
- 2.1V @ 250μA
- Rds On Max Id Vgs
- 1.6 Ω @ 500mA, 10V
- Power Dissipation
- 525mW
- Turn On Delay Time
- 5 ns
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Power Max
- 350mW
- Tepe Reflow Sıcaklığı (°C)
- 260
- Yüzey Montaj
- YES
- Rise Time
- 6ns
- Drain Currentmax Abs Id
- 0.34A
- Montaj Tipi
- Surface Mount
- Direnç
- 1.6Ohm
- Max Power Dissipation
- 350mW
- Continuous Drain Current Id
- 340mA
- Kılıf / Paket
- SOT-563, SOT-666
- Contact Plating
- Tin
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2010
- Pin Sayısı
- 6
- Radyasyon Dayanımı
- No
- Fet Feature
- Logic Level Gate
- Number Of Elements
- 2
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 6
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Kodu
- e3
- Element Configuration
- Dual
- Max Dual Supply Voltage
- 60V
- Turn Off Delay Time
- 12 ns
- Fet Type
- 2 N-Channel (Dual)
- Çalışma Sıcaklığı
- 150°C TJ
- Ambalaj
- Tape & Reel (TR)
- Terminal Formu
- FLAT
- Fabrika Tedarik Süresi
- 4 Weeks
- Tepe Reflow Süresi (maks. sn)
- 40
- Pin Sayısı
- 6
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