PSMNR60-25YLH

Specifications

Power Dissipationmax Abs

268 W

Case Connection

DRAIN

Jedec95 Code

MO-235

Jesd30 Code

R-PSSO-G4

Transistor Application

SWITCHING

Terminal Kaplaması

TIN

Terminal Pozisyonu

SINGLE

Package Style

SMALL OUTLINE

Operating Temperaturemin

-55 °C

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

260

Feedback Capmax Crss

1478 pF

Ds Breakdown Voltagemin

25 V

Ihs Manufacturer

NEXPERIA

Saturation Current

1

Package Shape

RECTANGULAR

Rohs Code

Yes

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Terminals

4

Drain Currentmax Id

300 A

Additional Feature

HIGH RELIABILITY

Operating Mode

ENHANCEMENT MODE

Part Life Cycle Code

Active

Reference Standard

IEC-60134

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.00102 Ω

Package Body Material

PLASTIC/EPOXY

Yüzey Montaj

YES

ECCN Kodu

EAR99

Date Of Intro

2019-09-30

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Süresi (maks. sn)

30

Pulsed Drain Currentmax Idm

1758 A

Operating Temperaturemax

175 °C

Exterior Housing Material

1

Avalanche Energy Rating Eas

3200 mJ

Polaritychannel Type

N-CHANNEL