PSMN3R8-100BS

Specifications

JESD-609 Kodu

e3

Number Of Terminals

2

Package Shape

RECTANGULAR

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Id

120 A

ECCN Kodu

EAR99

Terminal Kaplaması

TIN

Terminal Formu

GULL WING

Exterior Housing Material

1

Pulsed Drain Currentmax Idm

680 A

Package Style

SMALL OUTLINE

Tepe Reflow Süresi (maks. sn)

30

Package Description

D2PAK-3

Package Body Material

PLASTIC/EPOXY

Transistor Application

SWITCHING

Case Connection

DRAIN

Yüzey Montaj

YES

Jesd30 Code

R-PSSO-G2

Saturation Current

1

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Sıcaklığı (°C)

245

Operating Mode

ENHANCEMENT MODE

Rohs Code

Yes

Drainsource On Resistancemax

0.0039 Ω

Part Life Cycle Code

Active

Ds Breakdown Voltagemin

100 V

Polaritychannel Type

N-CHANNEL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Date Of Intro

2017-02-01

Avalanche Energy Rating Eas

537 mJ

Ihs Manufacturer

NEXPERIA