PSMN2R8-40YSD

Specifications

Avalanche Energy Rating Eas

452 mJ

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Date Of Intro

2019-08-01

Feedback Capmax Crss

337 pF

Ihs Manufacturer

NEXPERIA

Part Life Cycle Code

Active

Drainsource On Resistancemax

0.0028 Ω

Ds Breakdown Voltagemin

40 V

Operating Temperaturemin

-55 °C

Polaritychannel Type

N-CHANNEL

Tepe Reflow Sıcaklığı (°C)

260

Operating Mode

ENHANCEMENT MODE

Rohs Code

Yes

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Reference Standard

IEC-60134

REACH Uyumluluk Kodu

not_compliant

Jedec95 Code

MO-235

Jesd30 Code

R-PSSO-G4

Yüzey Montaj

YES

Case Connection

DRAIN

Moisture Sensitivity Levels

1

Pulsed Drain Currentmax Idm

658 A

Tepe Reflow Süresi (maks. sn)

30

Package Style

SMALL OUTLINE

Package Description

SOT-669, SOP-8, 4 PIN

Transistor Application

SWITCHING

Package Body Material

PLASTIC/EPOXY

Power Dissipationmax Abs

147 W

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Id

160 A

Package Shape

RECTANGULAR

Terminal Kaplaması

TIN

ECCN Kodu

EAR99

Terminal Formu

GULL WING

Number Of Elements

4

JESD-609 Kodu

e3

Operating Temperaturemax

175 °C

Number Of Terminals

4